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STM32L082CZ Folha de dados(PDF) 80 Page - STMicroelectronics

Nome de Peças STM32L082CZ
Descrição Electrónicos  Ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, up to 192KB Flash, 20KB SRAM, 6KB EEPROM, USB, ADC, DACs, AES
PDF  132 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L082CZ Folha de dados(HTML) 80 Page - STMicroelectronics

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Electrical characteristics
STM32L082xx
80/132
DS10688 Rev 7
6.3.9
Memory characteristics
RAM memory
Flash memory and data EEPROM
Table 49. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
STOP mode (or RESET)
1.65
-
-
V
Table 50. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming time for
word or half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
500
700
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 51. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to 105 °C
10
kcycles
Cycling (erase / write)
EEPROM data memory
100
Cycling (erase / write)
Program memory
TA = -40°C to 125 °C
0.2
Cycling (erase / write)
EEPROM data memory
2



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