NTMFS4922NET1G datasheet(1/8 Pages) ONSEMI

Nome de Peças	NTMFS4922NET1G

Descrição Electrónicos	Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL

PDF	8 Pages

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

Página de início	http://www.onsemi.com

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May, 2012 − Rev. 1

1

Publication Order Number:

NTMFS4922NE/D

NTMFS4922NE

Power MOSFET

30 V, 147 A, Single N−Channel, SO−8 FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Dual Sided Cooling Capability

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• CPU Power Delivery, DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

29.1

A

TA = 100°C

18.4

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.72

W

Continuous Drain

Current RqJA ≤ 10 s

(Note 1)

TA = 25°C

ID

47.5

A

TA = 100°C

30.0

Power Dissipation

RqJA ≤ 10 s (Note 1)

TA = 25°C

PD

7.23

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

17.1

A

TA = 100°C

10.8

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

0.93

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

147

A

TC =100°C

93

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

69.44

W

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

442

A

Current Limited by Package

TA = 25°C

IDmax

100

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

68

A

Drain to Source DV/DT

dV/dt

6

V/ns

Single Pulse Drain−to−Source Avalanche

Energy TJ = 25°C, VDD = 24 V, VGS = 10 V,

IL = 37 Apk, L = 0.3 mH, RG = 25 W

EAS

162.5

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

4922NE

AYWZZ

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

2.0 mW @ 10 V

147 A

3.0 mW @ 4.5 V

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4922NET1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

1

Nº de peça semelhante - NTMFS4922NET1G

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	NTMFS4921N	118Kb / 7P	Power MOSFET 30 V, 58.5 A, Single N?묬hannel, SO?? FL November, 2008 ??Rev. 1
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	NTMFS4921NT3G	118Kb / 7P	Power MOSFET 30 V, 58.5 A, Single N?묬hannel, SO?? FL November, 2008 ??Rev. 1
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Descrição semelhante - NTMFS4922NET1G

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