STG2017 datasheet(3/7 Pages) SAMHOP

Nome de Peças	STG2017

Descrição Electrónicos	Dual N-Channel E nhancement Mode Field Effect Transistor

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SAMHOP [SamHop Microelectronics Corp.]

Página de início	http://www.samhop.com.tw

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3 / 7 page

S T G 2017

Parameter

S ymbol

Condition

Min Typ Max Unit

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS

Diode Forward Voltage

VSD

VGS = 0V, Is =1.7A

0.8

Notes

c.Guaranteed by design, not subject to production testing.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

F igure 1. Output C haracteristics

F igure 2. Transfer C haracteristics

F igure 4. On-R esistance Variation with

Temperature

F igure 3. C apacitance

V DS , Drain-to S ource Voltage (V )

V GS , G ate-to-S ource Voltage (V )

V DS , Drain-to-S ource Voltage (V )

a.Surface Mounted on FR 4 Board, t 10sec.

C iss

C oss

1500

1200

900

600

300

V GS =4.5,4,3V

V GS =2V

2.2

1.8

1.4

1.0

0.6

0.2

-50

100

125

T j( C )

-25

V GS =4.5V

ID=5A

C rss

25 C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T j=-55 C

125 C

V GS =2.5V

1.2

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