TCLT101. Series

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 19-Jan-16

3

Document Number: 81256

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety

ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Fig. 2 - Derating Diagram

Fig. 3 - Test Pulse Diagram for Sample Test According to

DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

IC/IF

VCE = 5 V, IF = 5 mA

TCLT1010

CTR

50

-

600

%

VCE = 5 V, IF = 10 mA

TCLT1012

CTR

63

-

125

%

TCLT1013

CTR

100

-

200

%

VCE = 5 V, IF = 1 mA

TCLT1012

CTR

22

45

-

%

TCLT1013

CTR

34

70

-

%

VCE = 5 V, IF = 5 mA

TCLT1015

CTR

50

-

150

%

TCLT1016

CTR

100

-

300

%

TCLT1017

CTR

80

-

160

%

TCLT1018

CTR

130

-

260

%

TCLT1019

CTR

200

-

400

%

SAFETY AND INSULATION RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Partial discharge test voltage - routine test

100 %, ttest = 1 s

Vpd

1.6

kV

Partial discharge test voltage -

lot test (sample test)

tTr = 60 s, ttest = 10 s,

(see figure 2)

VIOTM

8kV

Vpd

1.3

kV

Isolation test voltage (RMS)

VISO

5000

VRMS

Insulation resistance

VIO = 500 V

RIO

1012

Ω

VIO = 500 V, Tamb = 100 °C

RIO

1011

Ω

VIO = 500 V, Tamb = 150 °C

(construction test only)

RIO

109

Ω

Forward current

Isi

130

mA

Power dissipation

Pso

265

mW

Rated impulse voltage

VIOTM

8kV

Safety temperature

Tsi

150

°C

Clearance distance

8.0

mm

Creepage distance

8.0

mm

Insulation distance (internal)

0.40

mm

0

25

50

75

125

0

50

100

150

200

300

Tsi - Safety Temperature (°C)

150

94 9182-2

100

250

IR-diode

Isi (mA)

Phototransistor

P

so (mW)

t

13930

t1, t2 = 1 s to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VIOTM

Vpd

VIOWM

VIORM

0

t1

ttest

tTr = 60 s

tstres

t3

t4

t2