STFU10NK60Z datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STFU10NK60Z

4/13

DocID028779 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID =

250 μA

600

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C(1)

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = +20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.75

4.5

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 4.5 A

0.68

0.75

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS = 25 V,

f = 1 MHz

1370

Coss

Output capacitance

156

Crss

Reverse transfer capacitance

Coss eq(1)

Equivalent output capacitance

VGS= 0 V, VDS= 0 to 480 V

Total gate charge

VDD = 480 V, ID = 8 A,

VGS = 10 V

(see Figure 13: "Test circuit

for gate charge behavior")

Qgs

Gate-source charge

Qgd

Gate-drain charge

Notes:

(1)Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80%

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 4 A,

RG = 4.7

Ω, VGS = 10 V

(see Figure 12: "Test circuit

for resistive load switching

times" and Figure 17:

"Switching time waveform")

Rise time

td(off)

Turn-off delay time

Fall time

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