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STW35N65DM2 Folha de dados(PDF) 4 Page - STMicroelectronics |
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STW35N65DM2 Folha de dados(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 32 A ISDM (1) Source-drain current (pulsed) - 90 A VSD (2) Forward on voltage VGS = 0 V, ISD = 32 A - 1.6 V trr Reverse recovery time ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 100 ns Qrr Reverse recovery charge - 0.42 µC IRRM Reverse recovery current - 8.4 A trr Reverse recovery time ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 205 ns Qrr Reverse recovery charge - 1.8 µC IRRM Reverse recovery current - 17.6 A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. STW35N65DM2 Electrical characteristics DS12247 - Rev 3 page 4/12 |
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