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TSB7191 Folha de dados(PDF) 9 Page - STMicroelectronics |
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TSB7191 Folha de dados(HTML) 9 Page - STMicroelectronics |
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9 / 34 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit SR Slew rate 3 V step, RL = 10 kΩ, CL = 100 pF, AV = 1 V/V, 10% to 90% 7.5 11 V/µs THD+N Total harmonic distorsion + noise VIN = 0.1 Vrms , RL = 10 kΩ, AV = +1, f = 1 kHz, BW = 22 kHz 0.0022 % VIN = 0.1 Vrms , RL = 1 kΩ, AV = +1, f = 1 kHz, BW = 22 kHz 0.0024 Φm Phase margin At gain = +10, 25 °C, 10 kΩ, 100 pF 63 ᵒ CLOAD Capacitive load drive 100(4) pF en Input voltage noise density f = 10 Hz 20 nV/√Hz f = 100 Hz 13 f = 10 kHz 12 en p-p Input noise voltage 0.1 Hz ≤ f ≤ 10 Hz 0.8 µVPP in Input current noise density f = 1 kHz 0.15(5) pA/√Hz 1. See Input offset voltage drift over the temperature in application information. 2. Current is positive when it is sinked into the op-amp. 3. Iio is defined as |Iibp – Iibn|. 4. For higher capacitive values see Figure 23. Phase margin vs. output current at VCC = 5 V and Figure 25. Phase margin vs. capacitive load 5. Theoretical value of the input current noise density based on the measurement of the input transistor base current: in= 2.q.ib TSB7191, TSB7191A, TSB7192, TSB7192A Electrical characteristics DS12641 - Rev 5 page 9/34 |
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