STA8090FG datasheet(25/41 Pages) STMICROELECTRONICS

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DS10719 Rev 6

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STA8090FG

Electrical characteristics

Note:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

VINL2

LDO2 input supply voltage (1.6 V to 4.3 V)

-0.3

4.8

VINM

SMPS coil input supply (1.6 V to 4.3 V)

-0.3

4.8

VDD_ANA SMPS input supply (1.6 V to 4.3 V)

-0.3

4.8

VESD-HBM Electrostatic discharge, human body model(1).-2

VESD-CDM Electrostatic discharge, charge device model(2).

-250

250

1. Balls sustaining only ±500 V are: A1, A2, A5, A6, A7, A8, A9, B1, B2, B9, C1, C2, D1, D2, D9, E1, E9, F1,

L7 and L8.

2. Ball L6 (LNA_IN) sustains only ±150 V.

Table 12. Voltage characteristics (continued)

Symbol

Parameter

Min.

Max.

Unit

Table 13. Thermal characteristics

Symbol

Parameter

Min.

Max.

Unit

Toper

Operative temperature range

-40

°C

Operative junction temperature

-40

125

°C

Tst

Storage temperature

-55

150

°C

Rj-amb

Thermal resistance junction to ambient(1)

1. According to JEDEC specification on a 2 layers board.

°C/W

Table 14. Frequency limits

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

FCLK

Operating ARM9 CPU frequency V

DDD = 1.2 V;

TC = 85 °C(1)

1. Not tested in production.

——

196

MHz

FAHB

AHB frequency

—

MHz

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