D4E

3

1

2

5

4

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF4L15400CB4

1.5 GHz

40 V

400 W

18.5 dB

57%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally matched pair transistors in push-pull configuration

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the European directive 2002/95/EC

Applications

•

1.3 and 1.5 GHz particle accelerator

•

L-band radar

Description

The RF4L15400CB4 is a 400 W, 50 V high performance, internally matched LDMOS

FET, designed for multiple applications in the frequency range from 1.2 to 1.5 GHz. It

is qualified up to 40 V operation.

Product status link

RF4L15400CB4

Product summary

Order code

RF4L15400CB4

Marking

4L15400

Package

D4E

Packing

Tray

Base/bulk quantity

20/100

400 W, 40 V, 1.2 to 1.5 GHz RF power LDMOS transistor

RF4L15400CB4

Datasheet

DS13645 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com