STTH60400SAG datasheet(3/11 Pages) STMICROELECTRONICS

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1.3

Electrical characteristics

Limiting value per diodes, unless otherwise specified.

Table 3. Static electrical characteristics

Symbol

Parameter

MIL-STD-750 test method

Test conditions(1)

Min. Max. Unit

Reverse leakage current

4016

DC method, VR = 400 V

Tj = 25 °C

µA

Tj = 125 °C

200

VF (2)

Forward voltage drop

4011

IF = 60 A

Tj = -55 °C

1.35

Tj = 25 °C

1.30

Tj = 125 °C

1.15

1. Test performed with both anode terminals 2 and 3 tied together

2. Pulse width ≤ 680 µs, duty cycle ≤ 2%

Table 4. Dynamic electrical characteristics

Symbol

Parameter

MIL-STD-

750 test

method

Test conditions

Min. Typ. Max. Unit

C(1)

Junction capacitance

4001

Tj = 25 °C

VR = 10 V, F = 1 MHz

250

trr

Reverse recovery time

4031

Tj = 25 °C

IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V

tfr(2)

Forward recovery time

4026

Tj = 25 °C

IF = 60 A, VFR = 2 V, dIF/dt = 100 A/μs

690

VFP

Forward recovery

voltage

4026

Tj = 25 °C

IF = 60 A, VFR = 2 V, dIF/dt = 100 A/μs

IRM

Reverse recovery

current

4031

Tj = 125 °C IF = 20 A, dIF/dt = -200 A/µs, VR = 160 V

QRR

Reverse recovery

charges

4031

1400

Sfactor Softness factor

4031

0.3

1. By default, guaranteed by sampling. Guaranteed by a 100% test in case the sampling acceptance criteria is not met.

2. AC characteristics (trr, tfr, Vfr, IRM, Sfactor and Qrr) are guaranteed by design and characterization. They are not tested in

production.

STTH60400HR

Electrical characteristics

DS11815 - Rev 3

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