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STM32F103RCT6 Folha de dados(PDF) 64 Page - STMicroelectronics

Nome de Peças STM32F103RCT6
Descrição Electrónicos  High-density performance line Arm®-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces
PDF  143 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F103RCT6 Folha de dados(HTML) 64 Page - STMicroelectronics

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Electrical characteristics
STM32F103xC, STM32F103xD, STM32F103xE
64/143
DS5792 Rev 13
5.3.8
PLL characteristics
The parameters given in Table 28 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 10.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 28. PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max(1)
1. Guaranteed by characterization results.
fPLL_IN
PLL input clock(2)
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
18.0
25
MHz
PLL input clock duty cycle
40
-
60
%
fPLL_OUT
PLL multiplier output clock
16
-
72
MHz
tLOCK
PLL lock time
-
-
200
µs
Jitter
Cycle-to-cycle jitter
-
-
300
ps
Table 29. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
tprog
16-bit programming time TA = –40 to +105 °C
40
52.5
70
µs
tERASE Page (2 KB) erase time
TA = –40 to +105 °C
20
-
40
ms
tME
Mass erase time
TA = –40 to +105 °C
20
-
40
ms
IDD
Supply current
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
--
28
mA
Write mode
fHCLK = 72 MHz, VDD = 3.3 V
--
7
mA
Erase mode
fHCLK = 72 MHz, VDD = 3.3 V
--
5
mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
--
50
µA
Vprog
Programming voltage
-
2
-
3.6
V



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