6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Input voltage

VDD to AGND

–0.3

6

V

VREF to AGND

–0.3

VDD + 0.3

Digital inputs to AGND

–0.3

VDD + 0.3

Output voltage, VOUTx to AGND

–0.3

VDD + 0.3

V

Input current into any pin

–10

10

mA

Junction temperature

–40

150

°C

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

V

Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all pins(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

POWER SUPPLY

VDD to AGND

Positive supply voltage to ground

2.7

5.5

V

DIGITAL INPUTS

VIH

Input high voltage

1.62

V

VIL

Input low voltage

0.45

V

REFERENCE INPUT

VREF to AGND

Reference voltage to ground

2.0

VDD

V

TEMPERATURE

Operating temperature

–40

85

°C

6.4 Thermal Information

THERMAL METRIC(1)

DAC82002

UNIT

DRX (WSON)

10 PINS

Junction-to-ambient thermal resistance

99.7

°C/W

Junction-to-case (top) thermal resistance

49.9

°C/W

Junction-to-board thermal resistance

35.9

°C/W

Junction-to-top characterization parameter

1.7

°C/W

Junction-to-board characterization parameter

35.7

°C/W

(1)

For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

DAC82002

SBASAK1 – AUGUST 2022

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