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WSM1050-R40M Folha de dados(PDF) 2 Page - AiT Semiconductor Inc.

Nome de Peças WSM1050-R40M
Descrição Electrónicos  WIRE WOUND SMD INDUCTOR
PDF  3 Pages
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Fabricante Electrônico  AITSEMI [AiT Semiconductor Inc.]
Página de início  https://ait-ic.com/
Logo AITSEMI - AiT Semiconductor Inc.

WSM1050-R40M Folha de dados(HTML) 2 Page - AiT Semiconductor Inc.

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AiT Semiconductor Inc.
www.ait-ic.com
WIRE WOUND SMD INDUCTOR
WSM
●ELECTRICAL CHARACTERISTICS
PART NUMBER
L(uH)
RDC
(mΩ) Typical
RDC
(mΩ)Max
Isat
(A)
Irms
(A)
WSM1365-R18M
0.18±20%
0.4
0.5
60
35
WSM1365-1R0M
1.0±20%
1.5
2.0
49
32
WSM1365-1R2M
1.2±20%
2.0
2.5
40
28
WSM1365-2R2M
2.2±20%
3.6
4.2
38
22
WSM1365-3R3M
3.3±20%
5.8
6.8
35
18
WSM1365-4R7M
4.7±20%
7.0
8.5
30
13.5
WSM1365-7R3M
7.3±20%
8.0
9.0
13
12
Note1. Measurement frequency of Inductance value : at 100kHz
Note2. Measurement ambient temperature of L, DCR and IDC : at 25°C
Note3. Isat: DC current at which the inductance drops 20%(typ) from its value without current
Note4. Irms: Average current for 40°C temperature rise from 25°C ambient(typical)
Note5. Inductance tolerance: M: ±20%
PART NUMBER
L(uH)
RDC
(mΩ) Typical
RDC
(mΩ)Max
Isat
(A)
Irms
(A)
WSM1050-R16M
0.16±20%
0.51
0.56
58
24
WSM1050-R40M
0.40±20%
0.67
0.74
37
24
WSM1050-R72M
0.72±20%
1.3
1.43
35
22
WSM1050-1R2M
1.2±20%
1.80
1.98
25
20
WSM1050-1R8M
1.8±20%
3.5
3.85
18
16
WSM1050-2R4M
2.4±20%
4.75
5.23
17
14
WSM1050-3R3M
3.3±20%
5.90
6.49
15
12
WSM1050-4R2M
4.2±20%
7.10
7.81
14
11
WSM1050-5R5M
5.5±20%
10.30
11.33
12
10
WSM1350-4R8M
4.8±20%
-
11.55
13
11
Note1. Measurement frequency of Inductance value : at 100kHz
Note2. Isat: DC current at which the inductance drops 30%(typ) from its value without current
Note3. Irms: Average current for 50°C temperature rise from 25°C ambient(typical)



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