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MSD103C Folha de dados(PDF) 2 Page - AiT Semiconductor Inc.

Nome de Peças MSD103C
Descrição Electrónicos  SCHOTTKY DIODES SCHOTTKY BARRIER SWITCHING DIODE
PDF  5 Pages
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Fabricante Electrônico  AITSEMI [AiT Semiconductor Inc.]
Página de início  https://ait-ic.com/
Logo AITSEMI - AiT Semiconductor Inc.

MSD103C Folha de dados(HTML) 2 Page - AiT Semiconductor Inc.

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AiT Semiconductor Inc.
www.ait-ic.com
MSD103A~MSD103C
SCHOTTKY DIODES
SCHOTTKY BARRIER SWITCHING DIODE
REV1.0
- JAN 2012 RELEASED -
- 2 -
ABSOLUTE MAXIMUM RATINGS
@ TA = 25℃, unless otherwise specified
Parameter
Symbol
MSD103A
MSD103B
MSD103C
Unit
Peak Repetitive Reverse Voltage
VRRM
40
30
20
V
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous CurrentNOTE1
IFM
350
mA
Non-Repetitive Peak Forward Surge Current
@ t ≤ 1.0s
IFSM
1.5
A
Power DissipationNOTE1
PD
400
mW
Thermal Resistance, Junction to Ambient
AirNOTE1
RθJA
300
℃/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +125
℃
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
NOTE1: Part mounted on FR-4 board with recommended pad layout, which can be found on our website
ELECTRICAL CHARACTERISTICS
@ TA = 25°C, unless otherwise specified
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Reverse Breakdown
VoltageNOTE2
V(BR)R
IR = 100μA
MSD103A
40
-
-
V
MSD103B
30
-
-
MSD103C
20
-
-
Forward Voltage DropNOTE2
VFM
IF = 20mA
-
-
0.37
V
IF = 200mA
-
-
0.60
Peak Reverse CurrentNOTE2
IRM
VR = 30V
MSD103A
-
-
5.0
µA
VR = 20V
MSD103B
-
-
VR = 10V
MSD103C
-
-
Total Capacitance
CT
VR = 0V, f = 1.0MHz
28
pF
Reverse Recovery Time
trr
IF = IR = 200mA,
Irr = 0.1 x IR, RL = 100Ω
10
ns
NOTE2: Short duration test pulse used to minimize self-heating effect.



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