UG18DCT datasheet(3/5 Pages) VISHAY

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UG18xCT, UGF18xCT, UGB18xCT

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Vishay General Semiconductor

Revision: 05-Jun-2019

Document Number: 88759

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RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Reverse Switching Characteristics Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

100

125

150

175

Case Temperature (°C)

Resistive or Inductive Load

100

1000

C = 105 °C

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

100

Instantaneous Forward Voltage (V)

J = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

100

0.01

0.1

100

1000

Percent of Rated Peak Reverse Voltage (%)

J = 100 °C

J = 125 °C

J = 25 °C

100

125

150

175

Junction Temperature (°C)

150 A/µs

100 A/µs

20 A/µs

50 A/µs

100 A/µs

150 A/µs

50 A/µs

dI/dt =

F = 9.0 A

R = 30 V

0.1

100

Reverse Voltage (V)

J = 125 °C

f = 1.0 MHz

sig = 50 mVp-p

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