APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739

2

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

PB51 • PB51A

SUPPLY VOLTAGE, +V

300V

OUTPUT CURRENT, within SOA

2.0A

POWER DISSIPATION, internal at T

1

83W

INPUT VOLTAGE, referred to COM

±15V

TEMPERATURE, pin solder—10s max.

260°C

175°C

TEMPERATURE RANGE, storage

–40 to +85°C

OPERATING TEMPERATURE RANGE, case

–25 to +85°C

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

PB51

PB51A

PARAMETER

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

±.75

±1.75

*

±1.0

V

OFFSET VOLTAGE, vs. temperature

–4.5

–7

*

*

mV/°C

INPUT IMPEDANCE, DC

25

50

*

*

k

INPUT CAPACITANCE

3

*

pF

CLOSED LOOP GAIN RANGE

3

10

25

*

*

*

V/V

GAIN ACCURACY, internal Rg, Rf

AV = 3

±10

±15

*

*

%

GAIN ACCURACY, external Rf

AV = 10

±15

±25

*

*

%

PHASE SHIFT

f = 10kHz, AVC

10

*

°

f = 200kHz, AVC

60

*

°

OUTPUT

VOLTAGE SWING

Io = 1.5A (PB58), 2A (PB58A)

VS–11

VS –8

VS–15 VS–11

V

VOLTAGE SWING

Io = 1A

VS–10

VS –7

*

*

V

VOLTAGE SWING

Io = .1A

VS–8

VS –5

*

*

V

CURRENT, continuous

1.5

2.0

A

SLEW RATE

Full temperature range

50

100

75

*

V/µs

CAPACITIVE LOAD

Full temperature range

2200

*

pF

SETTLING TIME to .1%

RL = 100, 2V step

2

*

µs

POWER BANDWIDTH

VC = 100 Vpp

160

320

240

*

kHz

SMALL SIGNAL BANDWIDTH

CC = 22pF, AV = 25, Vcc = ±100

100

*

kHz

SMALL SIGNAL BANDWIDTH

CC = 22pF, AV = 3, Vcc = ±30

1

*

MHz

POWER SUPPLY

Full temperature range

±60

±150

*

*

*

V

CURRENT, quiescent

VS = ±15

11

*

mA

VS = ±60

12

*

mA

VS = ±150

14

18

*

*

mA

THERMAL

RESISTANCE, AC junction to case5

Full temp. range, f > 60Hz

1.2

1.3

*

*

°C/W

RESISTANCE, DC junction to case

Full temp. range, f < 60Hz

1.6

1.8

*

*

°C/W

RESISTANCE, junction to air

Full temperature range

30

*

°C/W

TEMPERATURE RANGE, case

Meets full range specifications

–25

25

85

*

*

*

°C

NOTES: *

The specification of PB51A is identical to the specification for PB51 in applicable column to the left.

1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF (Mean Time to Failure).

2. The power supply voltage specified under typical (TYP) applies, T

3. Guaranteed by design but not tested.

4. +V

5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

6. +V

The PB51 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to

temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION