ACE14840B datasheet(1/3 Pages) ACE

Nome de Peças	ACE14840B

Descrição Electrónicos	Dual N-Channel Enhancement Mode Power MOSFET

PDF	3 Pages

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Fabricante Electrônico	ACE [ACE Technology Co., LTD.]

Página de início	http://www.ace-ele.com

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ACE14840B

Dual N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

⚫

DC-DC Converter

⚫

LCD Display Backlight

Features

⚫

VDS= 40V

⚫

ID = 5.7A

⚫

RDS(ON) @VGS = 10V, TYP23mΩ

⚫

RDS(ON) @VGS = 4.5V, TYP36mΩ

Absolute Maximum Ratings

TA=25℃, unless otherwise noted.

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous) *AC

TA=25°C

ID

5.7

A

TA=70°C

4.6

Drain Current (Pulse) *B

IDM

20

A

Avalanche energy L=0.1mH

EAS

3.2

mJ

Power Dissipation

TA=25°C

PD

1.9

W

Operating Temperature/ Storage Temperature

TJ//TSTG

-55~150

°C

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The

current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

t

≤10S

RthJA

55

65

°C/W

Maximum Junction-to-Ambient

Steady State

RthJA

120

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ACE14840B Folha de dados(PDF) 1 Page - ACE Technology Co., LTD.

ACE14840B Folha de dados(HTML) 1 Page - ACE Technology Co., LTD.

Nº de peça semelhante - ACE14840B

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