SS2P2, SS2P3, SS2P4

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Vishay General Semiconductor

Revision: 08-Mar-2022

1

Document Number: 88910

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Current Density Surface-Mount

Schottky Barrier Rectifier

LINKS TO ADDITIONAL RESOURCES

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets

MSL

level

1

per

J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For

use

in

low

voltage

high

frequency

inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case: SMP (DO-220AA)

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

automotive grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

PRIMARY CHARACTERISTICS

2.0 A

20 V, 30 V, 40 V

50 A

11.25 mJ

0.50 V

150 °C

Package

SMP (DO-220AA)

Circuit configuration

Single

SMP (DO-220AA)

Cathode

Anode

333

DDD3 D

3D Models

Available

PARAMETER

SYMBOL

SS2P2

SS2P3

SS2P4

UNIT

Device marking code

22

23

24

Maximum repetitive peak reverse voltage

20

30

40

V

Maximum average forward rectified current (fig. 1)

2.0

A

Peak forward surge current 10 ms single

half sine-wave superimposed on rated load

50

A

11.25

mJ

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-55 to +150

°C