BLP5LA55S

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© Ampleon Netherlands B.V. 2021. All rights reserved.

Product data sheet

Rev. 3 — 16 July 2021

17 of 20

BLP5LA55S

Power LDMOS transistor

9.

Handling information

[1]

CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V.

[2]

HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 12.

ESD sensitivity

ESD model

Class

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002

C2A [1]

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001

2 [2]

Table 13.

Abbreviations

Acronym

Description

CW

Continuous Wave

ESD

ElectroStatic Discharge

HF

High Frequency

LDMOS

Laterally Diffused Metal-Oxide Semiconductor

LTE

Long Term Evolution

MTF

Median Time to Failure

RoHS

Restriction of Hazardous Substances

SSB

Single Side-Band

SMD

Surface Mounted Device

TETRA

TErrestrial Trunked Radio

UHF

Ultra High Frequency

VHF

Very High Frequency

VSWR

Voltage Standing Wave Ratio

Table 14.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BLP5LA55S v.3

20210716

Product data sheet

-

BLP5LA55S v.2

Modifications:

• Table 3 on page 2: added orderable part number BLP5LA55SXY

BLP5LA55S v.2

20210401

Product data sheet

-

BLP5LA55S v.1

BLP5LA55S v.1

20210104

Product data sheet

-

-