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NVC080N120SC1 Folha de dados(PDF) 4 Page - ON Semiconductor

Nome de Peças NVC080N120SC1
Descrição Electrónicos  MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m
PDF  8 Pages
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NVC080N120SC1 Folha de dados(HTML) 4 Page - ON Semiconductor

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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
1200
V
Gate−to−Source Voltage
VGS
−15/+25
V
Recommended Operation Values of Gate−
to−Source Voltage
TC < 175°C
VGSop
−5/+20
V
Continuous Drain
Current RqJC
Steady
State
TC = 25°C
ID
31
A
Power Dissipation RqJC
PD
178
W
Continuous Drain
Current RqJC
Steady
State
TC = 100°C
ID
22
A
Power Dissipation RqJC
PD
89
W
Pulsed Drain Current (Note 2)
TC = 25°C
IDM
132
A
Single Pulse Surge Drain Current Capability
TC = 25°C, tp = 10 ms, RG = 4.7 W
IDSC
132
A
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to +175
°C
Source Current (Body Diode)
IS
18
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 18.5 A, L = 1 mH) (Note 3)
EAS
171
mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Note 1)
RqJC
0.84
°C/W
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 171 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18.5 A, VDD = 120 V, VGS = 18 V.



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