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SIP32101 Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças SIP32101
Descrição Electrónicos  6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP
PDF  9 Pages
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIP32101 Folha de dados(HTML) 2 Page - Vishay Siliconix

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SiP32101, SiP32102, SiP32103
www.vishay.com
Vishay Siliconix
S15-0598-Rev. G, 30-Mar-15
2
Document Number: 62617
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Negative current injection up to 300 mA.
b. All bumps soldered to 1 inch x 1 inch, 2 oz. copper, 4 layers PC board.
c. Derate 13.7 mW/°C above TA = 70 °C.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN, EN threshold curve.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
CONDITIONS
LIMIT
UNIT
VPA, VPB
Reference to GND
-0.3 to +6
V
Pulse at 1 ms reference to GND a
-1.6
VEN
Reference to GND
-0.3 to +6
Maximum Continuous Switch Current
7
A
Maximum Pulse Current
100 μs pulse
15
ESD (HBM)
8000
V
Operating Temperature
-40 to +85
°C
Operating Junction Temperature
125
Storage Temperature
-65 to +150
Thermal Resistance (
θJA) b
73
°C/W
Power Dissipation (PD) b, c
TA = 70 °C
1096
mW
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS UNLESS SPECIFIED
LIMITS
UNIT
VIN = VPA/VPB = 2.3 V to 5.5 V, TA = -40 °C to 85 °C
(Typical values are at VPA, VPB = 4.2 V,
CPA, CPB = 0.1 μF, TA = 25 °C)
MIN.a
TYP.b
MAX.a
Power Supply
Operating Voltage c
VPA/PB
2.3
-
5.5
V
Quiescent Current
IQ
VEN = 0 V (for SiP32101),
VEN = VIN (for SiP32102),
no load
-
0.015
300
nA
VEN = 0 V (for SiP32103),
no load
-
8.2
15
μA
Shutdown Current
ISHDN
VEN = VIN (for SiP32101),
VEN = 0 V (for SiP32102),
no load
-
0.010
300
nA
Internal FET
On-Resistance
RDS(on)
VPA/VPB = 2.3 V, IL = 500 mA, TA = 25 °C
-
8
13
m
Ω
VPA/VPB = 3.3 V, IL = 500 mA, TA = 25 °C
-
6.5
10
Control
EN / EN Input Logic-Low Voltage c
VIL
--
0.4
V
EN / EN Input Logic-High Voltage c
VIH
1.4
-
-
EN / EN Pull Resistor
REN
VPA/VPB = 5.5 V, VEN (or VEN) = 2.3 V
-
500
700
k
Ω
Timing
Output Turn-On Delay Time
td(on)
VIN = 4.2 V, RL = 100
Ω, CL = 0.1 μF, TA = 25 °C
-0.5
-
ms
Output Turn-On Rise Time
tr
-1
-
Output Turn-Off Delay Time
td(off)
-2.4
-
Output Turn-Off Fall Time
tf
-1
-



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