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ISCNH375W Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCNH375W
Descrição Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH375W Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCNH375W Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCNH375W Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
ISCNH375W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
900
-
-
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID= 0.25mA
2.5
-
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 7.5A
-
310
350
mΩ
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
-
-
±
0.1
uA
IDSS
Zero Gate Voltage Drain Current
VDS= 900V; VGS= 0
-
-
1.0
uA
VSD
Forward On-Voltage
IS= 15A; VGS= 0
-
-
1.2
V
Ciss
Input Capacitance
VGS = 0V,
VDS = 50V,
f = 1.0MHz
-
2840
-
pF
Coss
Output Capacitance
-
220
-
Crss
Reverse Transfer Capacitance
-
16
-
Qg
Total Gate Charge
VDD = 720V,
ID = 15A,
VGS =10V
-
62
-
nC
Qgs
Gate-Source Charge
-
15
-
Qgd
Gate-Drain Charge
-
23
-
td(on)
Turn-on Delay Time
VDD = 400V,
ID = 15A,
RG = 25Ω
-
49
-
ns
tr
Turn-on Rise Time
-
42
-
td(off)
Turn-off Delay Time
-
166
-
tf
Turn-off Fall Time
-
13
-



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