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STWA48N60DM2 Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STWA48N60DM2
Descrição Electrónicos  N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2 Power MOSFET in a TO-247 long leads package
PDF  12 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STWA48N60DM2 Folha de dados(HTML) 3 Page - STMicroelectronics

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STWA48N60DM2
Electrical ratings
DocID030156 Rev 1
3/12
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
40
A
Drain current (continuous) at Tcase = 100 °C
25
IDM(1)
Drain current (pulsed)
160
A
PTOT
Total dissipation at Tcase = 25 °C
300
W
dv/dt(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
Notes:
(1) Pulse width is limited by safe operating area
(2) ISD ≤ 40 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V
(3) VDS ≤ 480 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.42
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(Pulse width limited by Tjmax)
7
A
EAR
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
950
mJ



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