STTH15RQ06 datasheet(2/17 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS)

Forward rms current

IF(AV)

Average forward current δ = 0.5, square wave

TC = 115 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

120

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature

175

°C

Table 2. Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

1.5

°C/W

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

400

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 7.5 A

2.45

Tj = 150 °C

1.15

1.45

Tj = 25 °C

IF = 15 A

2.95

Tj = 150 °C

1.45

1.85

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.05 x IF(AV) + 0.053 x IF 2 (RMS)

Table 4. Dynamic electrical characteristics

Symbol Parameter

Test conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, IR = 1 A, Irr = 0.25 A

IF = 1 A, VR = 30 V, dlF/dt = -50 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 15 A, VR = 400 V, dlF/dt = -200 A/µs

QRR

Reverse recovery charge

250

trr

Reverse recovery time

For more information, please refer to the following application notes related to the power losses:

STTH15RQ06

Characteristics

DS12162 - Rev 2

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