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STM8L151C2 Folha de dados(PDF) 75 Page - STMicroelectronics

Nome de Peças STM8L151C2
Descrição Electrónicos  8-bit ultra-low-power MCU, up to 8 KB Flash, up to 256 bytes data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
PDF  123 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STM8L151C2 Folha de dados(HTML) 75 Page - STMicroelectronics

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DS7204 Rev 11
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STM8L151x2, STM8L151x3
Electrical parameters
102
Figure 17. LSE oscillator circuit diagram
Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
In the following table, data is based on characterization results, not tested in production,
unless otherwise specified.
MSv37776V1
OSCOUT
OSCIN
fLSE
CL1
RF
STM8
Resonator
Consumption
control
gm
Rm
Cm
Lm
Resonator
CL2
CO
Table 32. HSI oscillator characteristics
Symbol
Parameter
Conditions(1)(2)
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.0 V
-
16
-
MHz
ACCHSI
Accuracy of HSI
oscillator (factory
calibrated)
VDD = 3.0 V, TA = 25 °C
-1 (3)
-1(3)
%
VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C
-1.5
-
1.5
%
VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C
-2
-
2
%
VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C
-2.5
-
2
%
VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C
-4.5
-
2
%
1.65 V
≤VDD ≤ 3.6 V,
-40 °C
≤TA ≤ 125 °C
-4.5
-
3
%
TRIM
HSI user trimming
step(4)
Trimming code
≠ multiple of 16
-
0.4
0.7
%
Trimming code = multiple of 16
-
± 1.5
%
tsu(HSI)
HSI oscillator setup
time (wakeup time)
--
3.7
6(5)
µs
IDD(HSI)
HSI oscillator power
consumption
-
-
100
140(5)
µA
1.
VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
2.
TA > 85 °C is valid only for devices with suffix 3 temperature range.
3.
Tested in production.
4.
The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16
(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for
more details.
5.
Guaranteed by design.



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