STGF10M65DF2 datasheet(1/17 Pages) STMICROELECTRONICS

Nome de Peças	STGF10M65DF2

Descrição Electrónicos	Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

PDF	17 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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April 2017

DocID027428 Rev 7

1/17

This is information on a product in full production.

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STGF10M65DF2

Trench gate field-stop IGBT, M series 650 V, 10 A

low-loss in TO-220FP package

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of short-circuit withstand time



VCE(sat) = 1.55 V (typ.) @ IC = 10 A



Tight parameter distribution



Safer paralleling



Positive VCE(sat) temperature coefficient



Low thermal resistance



Soft and very fast recovery antiparallel diode



Maximum junction temperature: TJ = 175 °C

Applications



Motor control



UPS



PFC



General purpose inverter

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGF10M65DF2

G10M65DF2

TO-220FP

Tube

TO-220FP

C (2)

G (1)

E (3)

Sc12850_no_tab

Nº de peça semelhante - STGF10M65DF2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STGF100N30	699Kb / 13P	90 A - 330 V - fast IGBT 11-Feb-2009
	STGF10H60DF	1Mb / 24P	Trench gate field-stop IGBT, H series 600 V, 10 A high speed 31-Oct-2013
	STGF10HF60KD	477Kb / 13P	10 A - 600 V - short-circuit rugged IGBT 23-Feb-2012
	STGF10HF60KD	477Kb / 13P	10 A - 600 V - short-circuit rugged IGBT 23-Feb-2012
	STGF10NB60SD	325Kb / 8P	N-CHANNEL 10A - 600V TO-220FP PowerMESH IGBT Jun-2003

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Descrição semelhante - STGF10M65DF2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STGB10M65DF2	1Mb / 20P	Trench gate field-stop IGBT, M series 650 V, 10 A low loss 20-Oct-2015
	STGF15M65DF2	910Kb / 15P	Trench gate field-stop IGBT M series, 650 V 15 A low loss 14-Oct-2015
	STGP10M65DF2	945Kb / 18P	Trench gate field-stop IGBT, M series 650 V, 10 A low loss 19-Oct-2015
	STGF4M65DF2	983Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 4 A low loss 21-Nov-2016
	STGW10M65DF2	928Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 10 A low loss 08-Mar-2016
	STGW75M65DF2	1,005Kb / 17P	Trench gate field-stop IGBT, M series 650 V, 75 A low loss 15-Jun-2016
	STGWA50M65DF2	971Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 50 A low loss 14-Jun-2016
	STGF30M65DF2	731Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package 11-Apr-2017
	STGP20M65DF2	520Kb / 16P	Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT 08-Oct-2018
	STGB10M65DF2	1Mb / 19P	Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package 04-Apr-2017

More results

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