NDS352AP datasheet(2/9 Pages) ONSEMI

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NDS352AP

www.onsemi.com

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.

Symbol

Parameter

Ratings

Unit

VDSS

Drain−Source Voltage

−30

VGSS

Gate−Source Voltage − Continuous

±20

Maximum Drain Current – Continuous (Note 1a)

±0.9

Maximum Drain Current – Pulsed

±10

Maximum Power Dissipation (Note 1a)

0.5

Maximum Power Dissipation (Note 1b)

0.46

TJ, TSTG

Operating and Storage Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

RqJA

Thermal Resistance, Junction−to−Ambient (Note 1a)

250

°C/W

RqJC

Thermal Resistance, Junction−to−Case (Note 1)

°C/W

1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design.

PD(t) +

TJ * TA

RqJA(t)

TJ * TA

RqJC ) RqCA(t)

+ I2D(t) RDS(ON)@T

Typical RqJA using the board layouts shown below on 4.5″x 5″ FR−4 PCB in a still air environment:

a) 250°C/W when mounted on a 0.02 in2 pad

of 2oz copper.

b) 270°C/W when mounted on a 0.001 in2 pad

of 2oz copper.

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