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TN2540 Folha de dados(PDF) 1 Page - Microchip Technology

Nome de Peças TN2540
Descrição Electrónicos  N-Channel Enhancement-Mode Vertical DMOS FET
PDF  14 Pages
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Fabricante Electrônico  MICROCHIP [Microchip Technology]
Página de início  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TN2540 Folha de dados(HTML) 1 Page - Microchip Technology

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2020 Microchip Technology Inc.
DS20005954A-page 1
TN2540
Features
• 2V Maximum Low Threshold
• High Input Impedance
• 125 pF Maximum Low Input Capacitance
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage
Applications
• Logic-Level Interfaces (Ideal for TTL and CMOS)
• Solid-State Relays
• Battery-Operated Systems
• Photovoltaic Drives
• Analog Switches
• General Purpose Line Drivers
• Telecommunication Switches
General Description
The TN2540 low-threshold Enhancement-mode
(normally-off) transistor uses a vertical DMOS structure
and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Package Types
See Table 3-1 and Table 3-2 for pin information.
3-lead SOT-89
(Top view)
GATE
SOURCE
DRAIN
DRAIN
3-lead TO-92
(Top view)
GATE
SOURCE
DRAIN
N-Channel Enhancement-Mode Vertical DMOS FET


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