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FS10ASJ-3 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FS10ASJ-3 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FS10ASJ-3 FEATURES · Drain Current : ID= 10A@ TC=25℃ · Drain Source Voltage : VDSS= 150V(Min) · Static Drain-Source On-Resistance : RDS(on) =160mΩ(Max) @VGS=10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.57 ℃ /W |
Nº de peça semelhante - FS10ASJ-3 |
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Descrição semelhante - FS10ASJ-3 |
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