FDPC8014AS datasheet(9/12 Pages) ONSEMI

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FDPC8014AS

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TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)

10−5

10−4

10−3

10−2

10−1

0.001

0.01

0.1

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

PDM

Figure 26. Junction−to−Case Transient Thermal Response Curve

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

ZqJC (t) = r(t) x RqJC

RqJC = 3.3°C/W

DUTY FACTOR: D = t1 / t2

TJ − TC = PDM x ZqJC (t)

TYPICAL CHARACTERISTICS

SyncFET Schottky Body Diode Characteristics

ON Semiconductor’s SyncFET process embeds a

Schottky diode in parallel with POWERTRENCH

MOSFET. This diode exhibits similar characteristics to a

discrete external Schottky diode in parallel with a MOSFET.

Figure 27 shows the reverses recovery characteristic of the

FDPC8014AS.

Schottky barrier diodes exhibit significant leakage at high

temperature and high reverse voltage. This will increase the

power in the device.

Figure 27. FDPC8014AS SyncFET Body Diode Reverse

Recovery Characteristic

Figure 28. SyncFET Body Diode Reverse Leakage vs.

Drain−source Voltage

100

150

200

250

300

350

400

450

500

−10

di/dt = 300 A/ms

TIME (ns)

−6

−5

−4

−3

−2

VDS, REVERSE VOLTAGE (V)

TJ = 125°C

TJ = 25°C

TJ = 100°C

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