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LM9N20LP Folha de dados(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Nome de Peças LM9N20LP
Descrição Electrónicos  N-Channel Enhancement Mode Power MOSFET
PDF  9 Pages
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Fabricante Electrônico  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Página de início  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM9N20LP Folha de dados(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM9N20LP Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM9N20LP Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM9N20LP Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LM9N20LP Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd LM9N20LP Datasheet HTML 5Page - Shanghai Leiditech Electronic Technology Co., Ltd LM9N20LP Datasheet HTML 6Page - Shanghai Leiditech Electronic Technology Co., Ltd LM9N20LP Datasheet HTML 7Page - Shanghai Leiditech Electronic Technology Co., Ltd LM9N20LP Datasheet HTML 8Page - Shanghai Leiditech Electronic Technology Co., Ltd LM9N20LP Datasheet HTML 9Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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Specifications T
J = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS = 0V, ID = 250µA
200
--
--
V
Zero Gate Voltage Drain Current
I
DSS
V
DS = 200V, VGS = 0V, TJ = 25º
C
--
--
1
μA
Gate-Source Leakage
I
GSS
VGS = ±20V
--
--
±100
nA
Gate-Source Threshold Voltage
V
GS(th)
V
DS = VGS, ID= 250µA
2.0
--
4.0
V
Drain-Source On-Resistance (Note3)
R
DS(on)
V
GS = 10V, ID = 4.5A
--
0.25
0.3
Ω
Dynamic
Input Capacitance
C
iss
V
GS = 0V,
V
DS = 25V,
f = 1.0MHz
--
605
--
pF
Output Capacitance
C
oss
--
87
--
Reverse Transfer Capacitance
C
rss
--
37
--
Total Gate Charge
Q
g
V
DD = 160V, ID = 9A,
V
GS = 10V
--
19
--
nC
Gate-Source Charge
Q
gs
--
3.3
--
Gate-Drain Charge
Q
gd
--
8
--
Turn-on Delay Time
t
d(on)
V
DD =100V, ID =9A,
R
G = 25 Ω
--
35
--
ns
Turn-on Rise Time
t
r
--
20
--
Turn-off Delay Time
t
d(off)
--
150
--
Turn-off Fall Time
t
f
--
36
--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
T
C = 25 º
C
--
--
9
A
Pulsed Diode Forward Current
I
SM
--
--
36
Body Diode Voltage
V
SD
T
J = 25º
C, I
SD = 4.5A, VGS = 0V
--
--
1.4
V
Reverse Recovery Time
t
rr
V
GS = 0V,IS = 9A,
di
F/dt =100A /μs
--
145
--
ns
Reverse Recovery Charge
Q
rr
--
0.82
--
μC
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
L=10mH, V
DD = 50V, RG = 25 Ω, Starting TJ = 25 ºC
3.
Pulse Test: Pulse width
≤ 300μs, Duty Cycle ≤ 1%
Rev 2.0 :
www.leiditech.com
12.01.2019
2/9
LMAK9N20



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