600F150JT250XT datasheet(1/9 Pages) NXP

Nome de Peças	600F150JT250XT

Descrição Electrónicos	RF Power LDMOS Transistor

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A3V07H600--42N

1

RF Device Data

NXP Semiconductors

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 112 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of 616 to

870 MHz.

717–768 MHz

 Typical Doherty Single--Carrier W--CDMA Performance: VDD =48 Vdc,

IDQA = 900 mA, VGSB =VGSC =1.0 Vdc(1),Pout = 112 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.(2)

Frequency

Gps

(dB)

D

(%)

Output PAR

(dB)

ACPR

(dBc)

717 MHz

16.9

52.8

8.0

–30.7

742 MHz

17.0

51.3

8.1

–32.0

768 MHz

17.1

51.8

7.7

–32.4

616–870 MHz(3)

 Typical Doherty Single--Carrier W--CDMA Performance: VDD =48 Vdc,

IDQA = 900 mA, VGSB =VGSC =1.1 Vdc(1),Pout = 112 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency

Gps

(dB)

D

(%)

Output PAR

(dB)

ACPR

(dBc)

616 MHz

18.2

45.4

7.7

–32.4

632 MHz

18.5

47.1

7.7

–31.9

650 MHz

18.7

47.7

7.8

–31.0

717 MHz

19.1

44.4

8.3

–36.2

732 MHz

19.1

43.4

8.5

–38.3

750 MHz

19.2

42.9

8.5

–39.5

840 MHz

19.1

44.9

8.1

–33.3

850 MHz

18.7

43.9

8.1

–32.7

860 MHz

18.4

42.8

8.0

–32.6

870 MHz

18.0

41.7

7.8

–32.4

1. VGSB =VGSC = peaking bias voltage.

2. All data measured in fixture with device soldered to heatsink.

3. Fixture designed with a wideband match.

Features

 Advanced high performance in--package Doherty

 Greater negative gate--source voltage range for improved Class C

operation

 Designed for digital predistortion error correction systems

Document Number: A3V07H600--42N

Rev. 0, 08/2020

NXP Semiconductors

Technical Data

616–870 MHz, 112 W Avg., 48 V

AIRFAST RF POWER LDMOS

TRANSISTOR

A3V07H600--42N

OM--1230--6L

PLASTIC

Figure 1. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistor.

RFoutA/V A

DS

RFoutB/V B

R

DS

FinA/V

R

GSA

FinB/VGSB 25

34

Carrier

1

RFinC/VGSC

Peaking 2

Peaking 1

6

RFoutC/V C

DS

(Top View)

 2020 NXP B.V.

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