A3G20S350--01S

1

RF Device Data

NXP Semiconductors

RF Power GaN Transistor

This 59 W RF power GaN transistor is designed for cellular base station

applications covering the frequency range of 2110 to 2170 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 2110 to 2170 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

2100 MHz

Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz

18.0

37.0

7.0

–33.3

2140 MHz

18.0

36.9

7.0

–33.3

2170 MHz

18.1

37.0

6.9

–32.3

Features

 High terminal impedances for optimal broadband performance

 Designed for digital predistortion error correction systems

 Optimized for Doherty applications

Document Number: A3G20S350--01S

Rev. 0, 08/2020

NXP Semiconductors

Technical Data

2110–2170 MHz, 59 W Avg., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

A3G20S350--01S

Figure 1. Pin Connections

(Top View)

21

NI--400S--2SA

 2020 NXP B.V.