600F1R0BT250XT datasheet(3/8 Pages) NXP

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NXP Semiconductors

Data Sheet: Technical Data

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A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1,2) (In NXP Doherty Production Test Fixture, 50 ohm system) VDD =48 Vdc, IDQA = 250 mA, VGSB = –5.0 Vdc,

Pout = 56 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHz Offset. [See note on correct biasing sequence.]

Power Gain

Gps

15.0

16.0

18.0

Drain Efficiency

D

44.3

54.3

—

Pout @ 3 dB Compression Point, CW

P3dB

53.6

55.1

—

dBm

Adjacent Channel Power Ratio

ACPR

—

–26.4

–21.9

dBc

Wideband Ruggedness (In NXP Doherty Production Test Fixture, 50 ohm system) IDQA = 250 mA, VGSB = –5.0 Vdc, f = 1995 MHz, Additive

WhiteGaussian Noise(AWGN)with10dBPAR

ISBW of 400 MHz at 55 Vdc, 228 W Avg. Modulated Output Power

(8.5 dB Input Overdrive from 228 W Avg. Modulated Output Power)

No Device Degradation

Typical Performance (In NXP Doherty Production Test Fixture, 50 ohm system) VDD =48 Vdc, IDQA = 250 mA, VGSB = –5.0 Vdc,

1805–2170 MHz Bandwidth

Pout @ 3 dB Compression Point (2)

P3dB

—

355

—

AM/PM

(Maximum value measured at the P3dB compression point across

the 1805–2170 MHz bandwidth)



—

–25

—



VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

260

—

MHz

Gain Flatness in 365 MHz Bandwidth @ Pout =56 W Avg.

—

1.7

—

Gain Variation over Temperature

(–40Cto+85C)

G

—

0.013

—

dB/C

Output Power Variation over Temperature

(–40Cto+85C)

P1dB

—

0.013

—

dB/C

Table 5. Ordering Information

Device

Tape and Reel Information

Package

A3G18D510--04SR3

R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel

NI--780S--4L

1. Part internally input matched.

2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors in a Doherty Configuration

Bias ON the device

1. Set gate voltage VGSA and VGSB to –5 V.

2. Set drain voltage VDSA and VDSB to nominal supply voltage (+48 V).

3. Increase VGSA (carrier side) until IDQA current is attained.

4. Increase VGSB (peaking side) to target bias voltage.

5. Apply RF input power to desired level.

Bias OFF the device

1. Disable RF input power.

2. Adjust gate voltage VGSA and VGSB to –5 V.

3. Adjust drain voltage VDSA and VDSB to 0 V. Allow adequate time

for drain voltage to reduce to 0 V from external drain capacitors.

4. Disable VGSA and VGSB.

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