600F110JT250XT datasheet(2/8 Pages) NXP

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NXP Semiconductors

Data Sheet: Technical Data

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A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

125

Vdc

Gate--Source Voltage

VGS

–8, 0

Vdc

Operating Voltage

VDD

0to+55

Vdc

Maximum Forward Gate Current, IG (A+B),@TC =25C

IGMAX

Storage Temperature Range

Tstg

– 65to+150

C

Case Operating Temperature Range

– 55to+150

C

Operating Active Die Surface Temperature Range

– 55to+225

C

Maximum Channel Temperature (1)

TCH

275

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case

Case Temperature 72C, PD =68 W

RJC (IR)

0.83 (2)

C/W

Thermal Resistance by Finite Element Analysis, Channel--to--Case

Case Temperature 72C, PD =68 W

RCHC

(FEA)

1.1 (3)

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

Charge Device Model (per JS--002--2014)

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (4)

Off--State Drain Leakage

(VDS = 150 Vdc, VGS = –8 Vdc)

Carrier

(VDS = 150 Vdc, VGS = –8 Vdc)

Peaking

ID(BR)

—

24.3

mAdc

On Characteristics — Side A, Carrier

Gate Threshold Voltage

(VDS =10 Vdc, ID = 24.3 mAdc)

VGS(th)

–3.8

–3.0

–2.3

Vdc

Gate Quiescent Voltage

(VDD =48 Vdc, ID = 250 mAdc, Measured in Functional Test)

VGSA(Q)

–3.7

–3.2

–2.7

Vdc

Gate--Source Leakage Current

(VDS = 150 Vdc, VGS =–8 Vdc)

IGSS

–12.2

—

mAdc

On Characteristics — Side B, Peaking

Gate Threshold Voltage

(VDS =10 Vdc, ID = 24.3 mAdc)

VGS(th)

–3.8

–3.3

–2.3

Vdc

Gate--Source Leakage Current

(VDS = 150 Vdc, VGS =–8 Vdc)

IGSS

–12.2

—

mAdc

1. Reliability tests were conducted at 225C. Operations with TCH at 275C will reduce median time to failure.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated

by the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8263.

4. Each side of device measured separately.

(continued)

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