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AT25DF041B Folha de dados(PDF) 2 Page - Dialog Semiconductor |
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AT25DF041B Folha de dados(HTML) 2 Page - Dialog Semiconductor |
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2 / 4 page ![]() DS-25DF041B–040C–8/2017 Addendum High Temperature Operation (125 °C) This data sheet addendum is to be used in conjunction with the existing AT25DF041B datasheet specifications. The Adesto AT25DF041B 4Mbit Serial Flash devices will operate @ 125°C with the following datasheet caveats. All other parameters will meet the existing datasheet specifications. The ordering code suffix (CAN# Code) 'HR' or ‘HT’ must be used to ensure correct operation at this extended temperature range. Adesto will not modify and republish the current datasheet to reflect the CAN# ordering code or the above caveats. The standard AT25DF041B datasheet is available at http://www.adestotech.com. AT25DF041B 4-Mbit, 1.7V-3.6V Minimum SPI Serial Flash Memory DATASHEET (ADDENDUM) 1. Electrical Specifications 1.2 DC, AC, Program and Erase Characteristics 1.1 DC and AC Operating Range AT25DF041B-xxxHR Operating Temperature -40 C to +125C Endurance (Maximum) 20,000 Cycles Symbol Parameter 1.7V to 3.6V 2.3V to 3.6V Units Min Typ Max Min Typ Max IUDPD Ultra Deep Power-Down Current .2 1 .3 1 µA IDPD Deep Power-Down Current 4.5 40 5 40 µA ISB Standby Current 25 65 25 65 µA fSCK Maximum Clock Frequency for All Operation ( including 0Bh Opcode) 85 85 MHz fRDLF Maximum Clock Frequency for 03h 25 25 MHz fRDDO Maximum Clock Frequency for 3Bh Opcode 40 40 MHz tCSH Minimum CS - High Time 40 25 ns tPP Page Program Time (256 Bytes) 2 6 2 4 ms tBLKE Block Erase Time (4K) 45 100 45 100 ms Block Erase Time (32K) 250 800 250 500 ms Block Erase Time (64K) 450 1700 450 1000 ms tCHPE Chip Erase Time 3.6 12 3.6 6.8 s |
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