A2V09H400--04S

5

RF Device Data

NXP Semiconductors

P3dB LOAD PULL PERFORMANCE, CARRIER — 758–821 MHz

Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning

f

(MHz)

()

()

Max Output Power

P3dB

()

Gain (dB)

(dBm)

AM/PM ()

758

3.20 – j1.77

3.30 + j2.10

2.80 – j0.20

18.4

54.8

62.7

--14

790

2.80 – j2.10

3.00 + j2.50

2.70 – j0.30

18.5

54.7

60.8

--15

803

2.50 – j2.50

2.90 + j2.60

2.80 – j0.20

18.5

54.7

61.2

--15

821

3.30 – j2.30

2.90 + j2.80

2.40 + j0.20

18.9

54.6

60.6

--15

(1) Load impedance for optimum P3dB power.

= Impedance as measured from gate contact to ground.

Table 8. Carrier Side Load Pull Performance — Maximum Efficiency Tuning

f

(MHz)

()

()

Max Drain Efficiency

P3dB

()

Gain (dB)

(dBm)

AM/PM ()

758

3.20 – j1.77

3.04 + j2.10

2.60 + j1.70

20.2

53.9

73.3

--20

790

2.80 – j2.10

2.70 + j2.50

2.70 + j1.70

20.8

53.2

71.6

--24

803

2.50 – j2.50

2.60 + j2.60

2.50 + j2.10

21.1

53.0

72.0

--26

821

3.30 – j2.30

2.60 + j2.80

2.30 + j2.20

21.1

53.1

71.3

--24

(1) Load impedance for optimum P3dB efficiency.

= Impedance as measured from gate contact to ground.

Input Load Pull

Tuner and Test

Circuit

Device

Under

Test

Output Load Pull

Tuner and Test

Circuit