A3G26H350W17S

1

RF Device Data

NXP Semiconductors

RF Power GaN Transistor

This 59 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 2496 to 2690 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

2600 MHz

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

2496 MHz

13.3

49.9

8.9

–33.2

2590 MHz

13.5

48.5

9.1

–37.2

2690 MHz

13.3

48.5

8.9

–34.5

Features

 High terminal impedances for optimal broadband performance

 Advanced high performance in--package Doherty

 Improved linearized error vector magnitude with next generation signal

 Able to withstand extremely high output VSWR and broadband operating

conditions

Document Number: A3G26H350W17S

Rev. 1, 01/2021

NXP Semiconductors

Technical Data

2496–2690 MHz, 59 W Avg., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

A3G26H350W17S

NI--780S--4S2S

Figure 1. Pin Connections

(Top View)

6

3

15

24

Carrier

Peaking

 2020–2021 NXP B.V.