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M28F420 Folha de dados(PDF) 13 Page - STMicroelectronics

Nome de Peças M28F420
Descrição Electrónicos  4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
PDF  38 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M28F420 Folha de dados(HTML) 13 Page - STMicroelectronics

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background image
Symbol
Parameter
M28F410 / 20
Unit
-70
-80
-100
-120
VCC =5V
± 5%
VCC =5V
± 10%
VCC =5V
± 10%
VCC =5V
± 10%
SRAM
Interface
EPROM
Interface
EPROM
Interface
EPROM
Interface
Min
Max
Min
Max
Min
Max
Min
Max
tELBL
Chip Enable Low
to BYTE Low
5
555
ns
tELBH
Chip Enable Low
to BYTE High
5
555
ns
tBLQV
(2)
BYTE Low to
Output Valid
70
80
100
120
ns
tBHQV
BYTE High to
Output Valid
70
80
100
120
ns
tBLQZ
BYTE Low to
Output Hi-Z
25
30
35
35
ns
Notes: 1. Sampled only, not 100% tested.
2. It is equal to tAVQV when measured from DQ15A-1 valid.
Table 15. BYTE AC Characteristics (1)
(TA = 0 to 70
°C or –40 to 85°C; VPP = 12V ± 5%)
Symbol
Parameter
M28F410 / 20
Unit
-80
-90
-100
-120
VCC =5V
± 5%
VCC =5V
± 10%
VCC =5V
± 10%
VCC =5V
± 10%
SRAM
Interface
EPROM
Interface
EPROM
Interface
EPROM
Interface
Min
Max
Min
Max
Min
Max
Min
Max
tELBL
Chip Enable Low
to BYTE Low
5
555
ns
tELBH
Chip Enable Low
to BYTE High
5
555
ns
tBLQV
(2)
BYTE Low to
Output Valid
80
90
100
120
ns
tBHQV
BYTE High to
Output Valid
80
90
100
120
ns
tBLQZ
BYTE Low to
Output Hi-Z
30
35
40
45
ns
Notes: 1. Sampled only, not 100% tested.
2. It is equal to tAVQV when measured from DQ15A-1 valid.
Table 16. BYTE AC Characteristics (1)
(TA = –40 to 125
°C; VPP = 12V ± 5%)
13/38
M28F410, M28F420



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