| Os motores de busca de Datasheet de Componentes eletrônicos |
|
TSU112IYQ3T Folha de dados(PDF) 22 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
TSU112IYQ3T Folha de dados(HTML) 22 Page - STMicroelectronics |
|
22 / 32 page ![]() 5.9 EMI robustness of nanopower devices Nanopower devices exhibit higher impedance nodes and consequently they are more sensitive to EMI. To improve the natural robustness of the TSU112IY device, we recommend to add three capacitors of around 22 pF each between the two inputs, and between each input and ground. These capacitors lower the impedance of the input at high frequencies and therefore reduce the impact of the radiation TSU112IY EMI robustness of nanopower devices DS13616 - Rev 1 page 22/32 |
|
Ligação URL |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |