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ADRF5160BCPZ-R7 Folha de dados(PDF) 3 Page - Analog Devices

Nome de Peças ADRF5160BCPZ-R7
Descrição Electrónicos  High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
PDF  12 Pages
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

ADRF5160BCPZ-R7 Folha de dados(HTML) 3 Page - Analog Devices

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Data Sheet
ADRF5160
Rev. 0 | Page 3 of 12
SPECIFICATIONS
VDD = 5 V, VCTL = 0 V/VDD, TA = 25°C, and the device is a 50 Ω system, unless otherwise noted.
Table 1.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
0.7
4.0
GHz
INSERTION LOSS
0.7 GHz to 2.0 GHz
0.7
dB
2.0 GHz to 3.5 GHz
0.8
1.01
dB
3.5 GHz to 4.0 GHz
0.9
dB
ISOLATION
RFC to RF1 and RF2 (Worst Case)
0.7 GHz to 2.0 GHz
53
dB
2.0 GHz to 4.0 GHz
45
dB
RF1 to RF2
0.7 GHz to 2.0 GHz
51
dB
2.0 GHz to 4.0 GHz
35
dB
RETURN LOSS
RFC
0.7 GHz to 2.0 GHz
20
dB
2.0 GHz to 4.0 GHz
19
dB
RF1 and RF2 (On State)
0.7 GHz to 2.0 GHz
19
dB
2.0 GHz to 4.0 GHz
18
dB
SWITCHING CHARACTERISTICS
Rise and Fall Time (tRISE, tFALL)
10%/90% radio frequency output (RFOUT)
0.27
µs
On and Off Time (tON, tOFF)
50% VCTL to 10%/90% RFOUT
1.2
µs
INPUT LINEARITY
0.1 dB Compression (P0.1dB)
47
dBm
Third-Order Intercept (IP3)
Two-tone input power = 30 dBm per tone at 1 MHz tone spacing
0.7 GHz to 2.0 GHz
72
dBm
2.0 GHz to 4.0 GHz
70
dBm
SUPPLY CURRENT
1.1
mA
DIGITAL CONTROL INPUT
VDD = 4.5 V to 5.4 V, TCASE = −40°C to +105°C
Low Voltage
0
0.8
V
High Voltage
1.3
5
V
Low and High Current
<1
µA
RECOMMENDED OPERATING CONDITIONS
Supply Voltage Range (VDD)
4.5
5.4
V
Control Voltage Range (VCTL)
0
VDD
V
RF Input Power
Case Temperature (TCASE) = 105°C2
Continuous wave (CW)
43
dBm
8 dB peak average ratio (PAR) LTE, long-term (>10 years) average
41
dBm
8 dB PAR LTE, single event (<10 sec) average
44
dBm
TCASE = 85°C
CW
45
dBm
8 dB PAR LTE, long-term (>10 years) average
41
dBm
8 dB PAR LTE, single event (<10 sec) average
44
dBm
TCASE = 25°C
CW
47.5
dBm
8 dB PAR LTE, long-term (>10 years) average
41
dBm
8 dB PAR LTE, single event (<10 sec) average
44
dBm
TCASE = −40°C
CW
49
dBm
8 dB PAR LTE, long-term (>10 years) average
41
dBm
8 dB PAR LTE, single event (<10 sec) average
44
dBm
TCASE Range
−40
+105
°C
1
Guaranteed by design for device to device and over operating temperature variation.
2
Peak power is 49 dBm, which corresponds to a PAR of 8 dB at LTE long-term.



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