UT4232G-S08-R datasheet(1/4 Pages) DOINGTER

Nome de Peças	UT4232G-S08-R

Descrição Electrónicos	Dual N-Channel MOSFET uses advanced trench technology

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Fabricante Electrônico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This Dual N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=7A,RDS(ON)<23mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-

7

A

Continuous Drain Current-TC=100℃

5.2

Pulsed Drain Current

33

EAS

Single Pulse Avalanche Energy

32

mJ

PD

Power Dissipation

2.5

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJL

Maximum Junction-to-Lead

---

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

---

G2

D1

D2

S1

G1

S2

UT4232G-S08-R

Nº de peça semelhante - UT4232G-S08-R

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unisonic Technologies	UT4232G-S08-R	150Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unisonic Technologies	UT4232G-S08-R	162Kb / 3P	N-CHANNEL ENHANCEMENT MODE MOSFET

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