IC42S8200 datasheet(5/76 Pages) ICSI

5 / 76 page

1+" 5&

Integrated Circuit Solution Inc.

DR018-0A 07/10/2001

DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)

Symbol Parameter

Test Condition

Speed Min.

Max.

Unit

IIL

Input Leakage Current

0V < VIN < VCC, with pins other than

µA

the tested pin at 0V

IOL

Output Leakage Current

Output is disabled

µA

0V < VOUT < VCC

VOH

Output High Voltage Level

IOUT = 2 mA

2.4

VOL

Output Low Voltage Level

IOUT = +2 mA

0.4

ICC1

Operating Current(1,2)

One Bank Operation, CAS latency = 3

-6

145

Burst Length=1

-7

140

tRC > tRC (min.)

-8

135

IOUT = 0mA

ICC2

Precharge Standby Current

CKE < VIL (MAX)tCK = tCK (MIN)

(In Power-Down Mode)

ICC3

Active Standby Current

CKE > VIH (MIN)tCK = tCK (MIN)

(In Non Power-Down Mode)

ICC4

Operating Current

tCK = tCK (MIN)

-6

140

(In Burst Mode)(1)

IOUT = 0mA

-7

130

-8

100

ICC5

Auto-Refresh Current

tRC = tRC (MIN)-6

-7

-8

ICC6

Self-Refresh Current

CKE < 0.2V

Notes:

1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time

increases. Also note that a bypass capacitor of at least 0.01 µ. should be inserted between Vcc and GND for each

memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.

2. Icc1 and Icc4 depend on the output load.

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