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PSMN2R0-30PL Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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PSMN2R0-30PL Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor PSMN2R0-30PL FEATURES · Drain Current –ID= 100A@ TC=25℃ · Drain Source Voltage- : VDSS= 30V(Min) · Static Drain-Source On-Resistance : RDS(on) = 2.1mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pluse 943 A PD Total Dissipation @TC=25℃ 211 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.71 ℃ /W |
Nº de peça semelhante - PSMN2R0-30PL |
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Descrição semelhante - PSMN2R0-30PL |
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