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LMBT8804 Folha de dados(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LMBT8804 Folha de dados(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 5 page ![]() ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND RESISTOR VALUES Device Marking LMBT8804 1A ●MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6 Vdc Collector Current — Continuous IC 200 mAdc ●THERMAL CHARACTERISTICS Total Device Dissipation, PD 250 mW FR−5 Board (Note 1) @ T A = 25° C Derate above 25°C 2 mW/℃ Thermal Resistance, RΘJA 500 ℃/W Junction–to–Ambient(Note 1) Junction and Storage temperature TJ,Tstg −55∼+150 ℃ 1. FR–5 = 1.0×0.75×0.062 in. ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Symbol Min. Typ. Max. Unit V (IC = 1.0 mAdc, I B = 0) 40 – – VBR(CBO) V (I C = 10 μAdc, I E = 0) 60 – – Emitter–Base Breakdown Voltage VBR(EBO) V (I E = 10 μAdc, I C = 0) 6 – – ICEX nA ( V CE = 30 Vdc, V EB = 3.0Vdc) – – 50 Base Cutoff Current IBL nA (V CE = 30 Vdc, V EB = 3.0 Vdc) – – 50 ON CHARACTERISTICS (Note 2.) hFE (I C = 0.1 mAdc, V CE = 1.0 Vdc) 40 – – (I C = 1.0 mAdc, V CE = 1.0 Vdc) 70 – – (I C = 10 mAdc, V CE = 1.0 Vdc) 100 – 300 (I C = 50 mAdc, V CE = 1.0 Vdc) 60 – – (I C = 100 mAdc, V CE = 1.0 Vdc) 30 – – Characteristic Collector–Emitter Breakdown Voltage VBR(CEO) Collector–Base Breakdown Voltage Collector Cutoff Current DC Current Gain Shipping 10000/Tape&Reel 2 EMITTER 3 COLLECTOR 1 BASE 1 2 3 DFN1006-3 LMBT8804 Rev 2.0 : www.leiditech.com 12.01.2019 1/5 |
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