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CP10C60 Folha de dados(PDF) 1 Page - First Silicon Co., Ltd |
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CP10C60 Folha de dados(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() SEMICONDUCTOR TECHNICAL DATA CP10C60 2019. 02. 06 1/2 Revision No : 0 Silicon Planar PNPN Thyristor (12A SCR) MAIN FEATURES Symbol value unit IT(RMS) 12 A VDRM/VRRM 600 V ITSM 120 A GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient andblocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) e u l a v r e t e m a r a p l o b m y s unit IT(RMS) RMS on-state current (full sine wave) TC=90℃ t=10ms 120 ITSM Non repetitive surge peak on-state current (full sine wave, Tj =25 ℃) t=8.3ms 130 A IGM Peak gate current 4 A PG(AV) Average gate power dissipation Tj=125 ℃ 0.5 W Tstg Tj Storage junction temperature range Operating junction temperature range -40 to +150 -40 to +125 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Rated repetitive peak off-state/reverse voltage VDRM,VRRM ID=10 μA 600 V Rated repetitive peak off-state current IDRM, IRRM VD=6 V 0 2 10 μA On-state voltage VTM IT=23A 1.75 V 20 mA Gate trigger current IGT VD=12V RL=100 Ω 1.30 Gate trigger voltage VGT VD=12V RL=100 Ω Holding current IH IT =100mA IG=20mA 20 mA TO-220F 1. KATHODE 2. ANODE 3. GATE =0.1A I T =0.1A I T 1.4 TO-220F A 12 V A A B C C D D E E F G H H 1 52 MAX 1 52 MAX J K L M L N N N O Q R R 1 2 3 M DIM MILLIMETERS 10 16 0 20 + _ 15 00 0 20 + _ 3 00 0 20 + _ 0 625±0 125 3 50 typ 0 45 0 1 + _ 3 80 0 2 + _ 13 20 0 20 + _ 2 54 0 2 + _ 4 50 0 2 + _ 6 36 0 3 + _ 2 70 0 20 + _ 2 7 typ 16 80 0 4 + _ |
Nº de peça semelhante - CP10C60 |
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Descrição semelhante - CP10C60 |
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