20 GHz to 54 GHz, GaAs, pHEMT, MMIC,

31 dBm (1 W) Power Amplifier

Data Sheet

ADPA7008CHIP

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibilityisassumedbyAnalogDevicesforitsuse,norforanyinfringementsofpatentsorother

rights of third parties that may result from its use. Specifications subject to change without notice.

No license is granted by implication or otherwise under any patent or patent rights of Analog

Devices.Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

©2021 Analog Devices, Inc. All rights reserved.

Technical Support

www.analog.com

FEATURES

Output P1dB: 30.5 dBm typical at 22 GHz to 42 GHz

Gain: 18 dB typical at 22 GHz to 42 GHz

Input return loss: 22 dB typical at 22 GHz to 42 GHz

Output return loss: 23 dB typical at 22 GHz to 42 GHz

Output IP3: 38 dBm typical at 22 GHz to 42 GHz

Supply voltage: 5 V typical at 1500 mA

50 Ω matched input and output

Die size: 3.610 mm × 3.610 mm × 0.102 mm

APPLICATIONS

Military and space

Test instrumentation

Satellite communications

FUNCTIONAL BLOCK DIAGRAM

RFOUT

RFIN

VDET

ADPA7008CHIP

Figure 1.

GENERAL DESCRIPTION

The ADPA7008CHIP is a gallium arsenide (GaAs),

pseudomorphic high electron mobility transistor (pHEMT),

monolithic microwave integrated circuit (MMIC), 31 dBm

saturated output power (1 W) distributed power amplifier that

operates from 20 GHz to 54 GHz. The amplifier provides a gain

of 18 dB, an output power for 1 dB compression (P1dB) of

30.5 dBm, and a typical output third-order intercept (IP3) of

38 dBm at 22 GHz to 42 GHz. The ADPA7008CHIP requires

and outputs that are internally matched to 50 Ω, facilitating

integration into multichip modules (MCMs). All data is taken

with the RFIN and RFOUT pads connected via one 0.076 mm

(3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.

.