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2SK3003 Folha de dados(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Nome de Peças 2SK3003
Descrição Electrónicos  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Fabricante Electrônico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de início  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

2SK3003 Folha de dados(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
4 —
0
1020
3040
50
0
2
4
6
8
10
12
V
DS = 100V
V
DS = 40V
V
DS = 160V
Note : I
※
D = 19.0A
Q
G, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes :
※
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Fi
gure 6. Gate Charge Characteristics
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10 µs
10 ms
100 µs
DC
1 ms
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
25
50
75
100
125
150
0
5
10
15
20
T
C, Case Temperature [
]
℃
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
※
1. V
GS = 10 V
2. I
D = 9.5 A
T
J, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
GS = 0 V
2. I
D = 250 µ A
T
J, Junction Temperature [
oC]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
2SK3003



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