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LM4189 Folha de dados(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Nome de Peças LM4189
Descrição Electrónicos  P-Channel MOSFET
PDF  5 Pages
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Fabricante Electrônico  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Página de início  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM4189 Folha de dados(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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General Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast
switching applications.
Features
VDS
ID
(at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
-40V
-20A
45mΩ(Max)
65mΩ(Max)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
TC=25°C
I
D
-20
A
TC=100°C
I
D
-12
A
Drain Current – Pulsed
IDM
-80
A
Maximum Power Dissipation
P
D
33
W
Junction and Storage Temperature Range
T
J,TSTG
-55 To 150
℃
Thermal Characteristics
Parameter
Symbol
Typ
Max
Unit
Thermal Resistance junction-case
R
θJc
3.6
℃
/W
Thermal Resistance junction-to-Ambient
R
θJA
62
℃
/W
D
G
S
D
G
S
TO252
100% UIS TESTED!
100% ∆Vds TESTED!
LM4189
MOSFET
P-Channel
Rev 2.0 :
www.leiditech.com
12.01.2019
1/5


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