KBPC35005 datasheet(1/3 Pages) YFWDIODE

Nome de Peças	KBPC35005

Descrição Electrónicos	35A HIGH CURRENT SINGLE-PHASE SILICON BRIDGE

PDF	3 Pages

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Fabricante Electrônico	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Página de início	http://www.yfwdiode.com/

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Dongguan YFW Electronics Co, Ltd.

35A HIGH CURRENT SINGLE-PHASE

SILICON BRIDGE

RECTIFIER

Voltage - 50 to 1000 V

Forward Current

– 35 A

FEATURES

High current capability

Low forward voltage drop

Glass Passivated Chip Junction

Low power loss, high efficiency

Lead free in comply with EU RoHS 2011/65/EU directives

MECHANICAL DATA

Case: KBPC(W)

Terminals: Solderable per MIL-STD-202, Method 208

Approx. Weight: 30.0g

KBPC(W)

Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.

Parameter

Symbols

KBPC350

05(W)

KBPC350

1(W)

KBPC350

2(W)

KBPC350

4(W)

KBPC350

6(W)

KBPC350

8(W)

KBPC351

0 (W)

Units

Maximum

Repetitive

Peak

Reverse

Voltage

VRRM

50

100

200

400

600

800

1000

V

Maximum RMS voltage

VRMS

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

VDC

50

100

200

400

600

800

1000

V

Maximum Average Forward

Rectified Current at TC=55℃

I(AV)

35

A

Peak Forward Surge Current 8.3 ms Single

Half Sine-Wave Superimposed on Rated

Load

(JEDEC method)

IFSM

400

A

VF

1.1

V

Maximum Reverse Current at

TA=25℃

at Rated DC Blocking Voltage

TA=125℃

IR

10

1000

μA

Typical Junction Capacitance

（

Note1）

Cj

300

pF

Typical Thermal Resistance

（

Note2）

RθJC

1.4

°C/W

Operating

and

Storage

Temperature

Range

Tj, Tstg

-55 ~ +150

°C

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）Thermal Resistance Junction to Case, Lead and Ambient.

Maximum Forward Voltage at 17.5A DC

and 25°C

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